3D integration of a hybrid quantum dot circuit-QED device addresses low microwave losses, a challenge for experiments requiring exotic material stacks. The process, using dense indium bump interconnects and Niobium Nitride (NbN) thin films, achieves internal quality factors above 10^5 in the single photon regime.
Circuit quality factor exceeds 10^4 in a 3D-integrated quantum device
3D integration of a hybrid quantum dot circuit-QED device addresses low microwave losses, a challenge for experiments requiring exotic material stacks. The process, using dense indium bump interconnects and Niobium Nitride (NbN) thin films, achieves internal quality factors above 10^5 in the single photon regime.