Most electronic memory storage devices require the ability to trap large numbers of electrons for each bit of memory. In an ideal world, however, it would take only one electron. This would reduce space requirements and power consumption for devices. Now, a team in China has realized this goal with an ultrathin device capable of minimizing the stray capacitance that plagued earlier attempts. The new study, published in Science, describes how this novel device has overcome challenges in implementing the single-electron design.
2D quantum memory device reaches single-electron limit of information storage
Most electronic memory storage devices require the ability to trap large numbers of electrons for each bit of memory. In an ideal world, however, it would take only one electron. This would reduce space requirements and power consumption for devices. Now, a team in China has realized this goal with an ultrathin device capable of minimizing the stray capacitance that plagued earlier attempts. The new study, published in Science, describes how this novel device has overcome challenges in implem...