Researchers developed a circuit-based method to characterize quantum phases at finite temperature, transforming Gibbs states with circuits of locality L. This advances understanding of self-correcting quantum memory.

Researchers developed a circuit-based method to characterize quantum phases at finite temperature, transforming Gibbs states with circuits of locality L. This advances understanding of self-correcting quantum memory.
Researchers developed a circuit-based method to characterize quantum phases at finite temperature, transforming Gibbs states with circuits of locality L. This advances understanding of self-correcting quantum memory.