Scientists enhanced material nonlinearity, realizing 1.6 nm V⁻¹ at 1.57 μm using a GaAs/AlGaAs quantum-well heterostructure and dielectric metasurface.
Researchers achieve 1.6 nm V⁻¹ nonlinearity in quantum-well structure
Scientists enhanced material nonlinearity, realizing 1.6 nm V⁻¹ at 1.57 μm using a GaAs/AlGaAs quantum-well heterostructure and dielectric metasurface.