Electrical resistance in a newly synthesised material drops by a factor of four to eleven when formed into nanowires. This unexpected leap in conductivity, observed in tantalum silicide arsenide (TaSiAs), challenges conventional understanding of square-net topological materials. Encapsulating these single-crystal nanowires with a silica shell maintains stability and reveals coherent electron flow along their surfaces, potentially enabling advances in future electronics and quantum technologies.
Researchers Synthesise TaSiAs Nanowires for Next-Generation Quantum Computing
Electrical resistance in a newly synthesised material drops by a factor of four to eleven when formed into nanowires. This unexpected leap in conductivity, observed in tantalum silicide arsenide (TaSiAs), challenges conventional understanding of square-net topological materials. Encapsulating these single-crystal nanowires with a silica shell maintains stability and reveals coherent electron flow along their surfaces, potentially enabling advances in future electronics and quantum technologies.